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BS IEC 62951-2:2019 pdf free.Semiconductor devices - Flexible and stretchable semiconductor devices. The stability test of a flexible TFT is carried out using four kinds of biased evaluation. The negative-bias-stress (NBS) test is carried out with a VGs of -20 V at a fixed Vps of 10 V under dark and the substrate temperature is maintained at 20 °C and...

BS IEC 62047-34:2019 pdf free.Semiconductor devices - Micro-electromechanical devices. The test system is built in accordance with the general provisions set out in 5.1 to 5.3 and the test preparation described in 6.1. The test of the static performance shall use the five-point sampling method or be in accordance with the user requirements. As shown in Figure 3, the same...

BS IEC 63068-2:2019 pdf free.Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. General Defects with surface morphological features shall be detected by optical inspection method. The following descriptions concern such defects in n/n+-type 4H-SiC homoepitaxial wafers with an off-cut angle of 4° along the direction of : — individual defects exhibiting hexagonal-shaped...

BS IEC 62047-32:2019 pdf free.Semiconductor devices-Micro-electromechanical devices. 5.2 Test conditions a) Keep the ambient temperature within 23 °C ± 5 °C. b) Maintain the vacuum degree of the vacuum chamber according to the actual operation of the resonator. C) Adjust the micro-optical apparatus to restrict the laser spot within the surface of the resonator. d) For transparent resonators, the laser...