BS IEC 63068-3:2020 pdf free.Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Test method for defects using photoluminescence. BS IEC 63068-3 Defects with characteristic PL features shall be evaluated by PL method. The following descriptions concern such defects in n/n+-type 4H-SiC homoepitaxial wafers with an off-cut angle of 4° along the direction...