BS IEC 62047-34:2019 pdf free.Semiconductor devices – Micro-electromechanical devices.
The test system is built in accordance with the general provisions set out in 5.1 to 5.3 and the test preparation described in 6.1. The test of the static performance shall use the five-point sampling method or be in accordance with the user requirements. As shown in Figure 3, the same number of dice in the five regions of upper, lower, left, right and middle of the wafer shall be tested. According to a normal sampling of general inspection level II in IEC 61193-2, the sampling shall be carried out and the sampling amount shall be more than it is in IEC 61193-2.Turn on the pressure source and control the pressure to be stable at the full-scale pressure for at least 1 minute and then at the zero-scale pressure for at least 1 minute. Recycle this process for 3 times. Select m(m23) test points uniformly between zero-scale pressure and the full-scale pressure in measure range. This test shall be started from the zero-scale pressure and approach full-scale pressure (i.e. forward stroke) by increasing load steadily in accordance with the provision. For each testing point, when the pressure is stable, read the output values of the devices on the wafer. Then start from full-scale pressure and approach the zero-scale pressure (i.e. backward stroke) by decreasing the load steadily in accordance with the provision. There are m test points in the full range and n cycle tests. Then there are n test data at each point in forward and backward stroke respectively. Calculate the average value of each test point in the forward or backward stroke and the overall average value of each test point in the forward and backward stroke.For absolute pressure-sensitive device, measure the output of the device under the input pressure within 10 Pa. For differential pressure-sensitive device, measure the output with both high and low pressure ends connected to the atmosphere.BS IEC 62047-34 pdf download.
BS IEC 62047-34:2019 pdf free
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